BSIM3v3.2.2 and BSIMPD Differences

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  1. Adding the Tox dependence into the threshold voltage (Vth) model.
  2. Adding the flat-band voltage (Vfb) as a new model parameter.
  3. Restructuring of the non-quasi-static (NQS) model, addition of NQS into the pole-zero analysis and fixing bugs in NQS codes.
  4. Adding temperature dependence into the diode junction capacitance.
  5. DC diode model now supporting a resistance-free diode and current- limiting feature.
  6. Elimination of the small negative capacitance of Cgs and Cgd in the accumulation-depletion regions.
  7. Introducing a separate set of channel-width and length dependence parameters (Llc, Lwc, Lwlc, Wlc, Wwc and Wwlc) to calculate Weff and Leff for the C-V model for better fitting of the capacitance data.
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In addition, BSIMPD has the following enhancements that are not in BSIM3v3.2.2:

  1. Real floating body simulation in both I-V and C-V. The body potential is determined by the balance of all the body current components.
  2. An improved parasitic bipolar current model. This includes enhancements in the various diode leakage components, second order effects (high-level injection and Early effect), diffusion charge equation, and temperature dependence of the diode junction capacitance.
  3. An improved impact-ionization current model. The contribution from BJT current is also modeled by the parameter Fbjtii.
  4. Enhancements in the threshold voltage and bulk charge formulation of the high positive body bias regime.
  5. Instance parameters (Pdbcp, Psbcp, Agbcp, Aebcp, Nbc) are provided to model the parasitics of devices with various body-contact and isolation structures.
  6. An external body node (the 6th node) and other improvements are introduced to facilitate the modeling of distributed body-resistance.
  7. Self heating. An external temperature node (the 7th node) is supported to facilitate the simulation of thermal coupling among neighboring devices.
  8. A unique SOI low frequency noise model, including a new excess noise resulting from the floating body effect.
  9. Width dependence of the body effect is modeled by parameters (K1, K1w1, K1w2).
  10. Improved history dependence of the body charges with two new parameters, (Fbody, DLCB).
  11. An instance parameter Vbsusr is provided for users to set the transient initial condition of the body potential.
  12. A sidewall source/drain to substrate (under the buried oxide) fringing cap is added.
  13. A source/drain buried oxide Si substrate parasitic cap is added.
  14. Body to back gate coupling is added.